Protective insulator for hfet devices

ABSTRACT

An HFET includes a first and second semiconductor material. A first composite passivation layer includes a first insulation layer and a first passivation layer, and the first passivation layer is disposed between the first insulation layer and the second semiconductor material. The HFET includes a second passivation layer, where the first insulation layer is disposed between the first passivation layer and the second passivation layer. A gate dielectric is disposed between the second semiconductor material and the first passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material, and a gate electrode is disposed laterally between the source electrode and the drain electrode. A first gate field plate is disposed between the first passivation layer and the second passivation layer and electrically connected to the gate electrode, and a second gate field plate is disposed above first gate field plate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/823,591 filed on Mar. 19, 2020, now pending, which is a continuationof U.S. patent application Ser. No. 16/144,631 filed on Sep. 27, 2018,now U.S. Pat. No. 10,629,719, which is a continuation of U.S. patentapplication Ser. No. 15/628,269, filed on Jun. 20, 2017, now U.S. Pat.No. 10,121,885, which is a continuation of U.S. patent application Ser.No. 15/096,132, filed on Apr. 11, 2016, now U.S. Pat. No. 9,722,063.U.S. patent application Ser. No. 16/823,591, U.S. Pat. Nos. 10,629,719,10,121,885, and 9,722,063 are hereby incorporated by reference in theirentirety.

TECHNICAL FIELD

This disclosure relates generally to high-voltage field effecttransistors (HFETs) and in particular but not exclusively, relates toprotective insulators in HFET devices.

BACKGROUND INFORMATION

High breakdown voltage and high electron mobility has made GaN an idealcandidate for high-power transistor applications. Furthermore, the largebandgap of GaN means that the performance of GaN transistors may bemaintained at much higher temperatures than other conventionalsemiconductor options. Applications include, but are not limited to,microwave radio-frequency amplifiers, high voltage switching devices,and power supplies. One mass market application is the microwave sourcefrom microwave ovens (to replace magnetrons).

Despite their potential for ubiquitous use in consumer electronics, GaNbased devices still suffer from several limitations as a result of thehigh-voltage environments they are used in. Device layers in GaNtransistors may build up charge during use, resulting in changing deviceperformance due to electric field redistribution, and thermal stressing.In the worst case, HFET devices may critically fail due to dielectricbreakdown or cracking of device layers.

BRIEF DESCRIPTION OF THE DRAWINGS

Non-limiting and non-exhaustive examples of the invention are describedwith reference to the following figures, wherein like reference numeralsrefer to like parts throughout the various views unless otherwisespecified.

FIG. 1 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 2 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 3 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 4 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 5 is a flow chart illustrating a method of HFET fabrication, inaccordance with the teachings of the present disclosure.

FIG. 6 is a flow chart illustrating a method of HFET fabrication, inaccordance with the teachings of the present disclosure.

FIG. 7 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 8 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

FIG. 9 is a cross-sectional view of an example HFET device with acomposite passivation layer, in accordance with the teachings of thepresent disclosure.

Corresponding reference characters indicate corresponding componentsthroughout the several views of the drawings. Skilled artisans willappreciate that elements in the figures are illustrated for simplicityand clarity and have not necessarily been drawn to scale. For example,the dimensions of some of the elements in the figures may be exaggeratedrelative to other elements to help to improve understanding of variousembodiments of the present invention. Also, common but well-understoodelements that are useful or necessary in a commercially feasibleembodiment are often not depicted in order to facilitate a lessobstructed view of these various embodiments of the present invention.

DETAILED DESCRIPTION

Examples of an apparatus and method for a protective insulator forhigh-voltage field effect transistors (HFETs) are described herein. Inthe following description, numerous specific details are set forth toprovide a thorough understanding of the examples. One skilled in therelevant art will recognize; however, that the techniques describedherein can be practiced without one or more of the specific details, orwith other methods, components, materials, etc. In other instances,well-known structures, materials, or operations are not shown ordescribed in detail to avoid obscuring certain aspects.

Reference throughout this specification to “one example” or “oneembodiment” means that a particular feature, structure, orcharacteristic described in connection with the example is included inat least one example of the present invention. Thus, the appearances ofthe phrases “in one example” or “in one embodiment” in various placesthroughout this specification are not necessarily all referring to thesame example. Furthermore, the particular features, structures, orcharacteristics may be combined in any suitable manner in one or moreexamples.

Throughout this specification, several terms of art are used. Theseterms are to take on their ordinary meaning in the art from which theycome, unless specifically defined herein or the context of their usewould clearly suggest otherwise. It should be noted that element namesand symbols may be used interchangeably through this document (e.g., Sivs. silicon); however, both have identical meaning.

FIG. 1 is a cross-sectional view of an example HFET 100 with a compositepassivation layer 199. HFET 100 includes first semiconductor material105, second semiconductor material 110, and heterojunction 115. Gatedielectric 155 is disposed on second semiconductor material 110.Heterojunction 115 is disposed between first semiconductor material 105and second semiconductor material 110. When the device is turned on, atwo-dimensional electron gas 120 arises at heterojunction 115, due tothe material properties of semiconductor materials 105, 110.

Plurality of composite passivation layers 199 is disposed above secondsemiconductor material 110. A first composite passivation layer isdisposed in plurality of composite passivation layers 199, and the firstcomposite passivation layer includes first insulation layer 170 andfirst passivation layer 165. Plurality of composite passivation layers199 also includes a second composite passivation layer with secondinsulation layer 192 and second passivation layer 175, where secondpassivation layer 175 is disposed between first insulation layer 170 andsecond insulation layer 192. In one example, gate dielectric 155 andfirst insulation layer 170 include the same material composition. Inanother or the same example, first passivation layer 165 and secondpassivation layer 175 include SiN, and gate dielectric 155 and firstinsulation layer 170 include a metal oxide. In the depicted example,gate dielectric 155 is disposed between first passivation layer 165 andsecond semiconductor material 110, and gate electrode 135 is disposedbetween gate dielectric 155 and first passivation layer 165. Theselective biasing of gate electrode 135 regulates the conductivitybetween source electrode 125 and drain electrode 130. First gate fieldplate 140 is disposed between first passivation layer 165 and secondpassivation layer 175. In one example, first gate field plate 140 iscoupled to the gate electrode 135. Source electrode 125 and drainelectrode 130 are coupled to second semiconductor material 110, andsource field plate 145 is coupled to source electrode 125. In oneexample, drain electrode 130 extends from second semiconductor material110 through at least one of the composite passivation layers inplurality of composite passivation layers 199.

In the illustrated example, gate electrode 135, first gate field plate140, and source field plate 145 have generally rectangularcross-sections. Gate electrode 135 includes a first edge 150. First edge150 is disposed a lateral distance d0 from the source electrode 125 anda vertical distance d5 above second semiconductor material 110. Firstedge 150 is vertically separated from second semiconductor material 110by gate dielectric 155 and first passivation layer 165.

In one example, the HFET includes third passivation layer 195. Secondinsulation layer 192 is disposed between second passivation layer 175and third passivation layer 195. In another or the same example, sourcefield plate 145 may be disposed between second insulation layer 192 andthird passivation layer 195. Furthermore, first gate field plate 140 maybe disposed between first insulation layer 170 and second passivationlayer 175.

First gate field plate 140 includes second edge 160. Second edge 160 isdisposed a lateral distance d0+d1 towards drain electrode 130 and avertical distance d5+d6 above second semiconductor material 110. Secondedge 160 is vertically separated from second semiconductor material 110by gate dielectric 155, first passivation layer 165, and firstinsulation layer 170. Source field plate 145 includes a third edge 174.Third edge 174 is disposed a lateral distance d0+d1+d3 towards drainelectrode 130 from a side of source electrode 125, and a verticaldistance d5+d6+d7 above second semiconductor material 110. Third edge174 is vertically separated from second semiconductor material 110 bygate dielectric 155, first passivation layer 165, first insulation layer170, second passivation layer 175, and second insulation layer 192. Itshould be noted that electric fields between each of gate electrode 135,first gate field plate 140, source field plate 145, and heterojunction115 are highest at their respective edges 150, 160, 174 under certainbias conditions.

Gate electrode 135 can be electrically connected to first gate fieldplate 140 in a variety of ways. In the illustrated example, theconnection between gate electrode 135 and first gate field plate 140 isoutside of the cross-sectional view. However, gate electrode 135 andfirst gate field plate 140 can be formed by a unitary member having agenerally L-shaped cross-section.

Source electrode 125 can be electrically connected to source field plate145 in a variety of ways. In the illustrated example, source electrode125 is electrically connected to source field plate 145 by a source viamember 180. In other examples, source electrode 125 can be electricallyconnected to source field plate 145 outside of the illustratedcross-section.

In the depicted example, drain electrode 130 is electrically connectedto a pair of drain via members 185, 190. Drain via members 185, 190extend through second passivation layer 175 to a same vertical level assource field plate 145, thus acting as extensions of drain electrode130. Via member 190, by virtue of being on the same vertical level assource field plate 145, is the nearest extension of drain electrode 130to source field plate 145. The side of source field plate 145 thatincludes a third edge 174 is disposed a lateral distance d4 away fromthe drain via member 190 at the same vertical level. In some examples,lateral distance d4 is no greater than that needed to maintain adevice-specific lateral dielectric breakdown voltage. In the illustratedexample, source field plate 145 and drain via member 190 are covered bya third passivation layer 195.

In the illustrated example, source electrode 125 and drain electrode 130may both rest directly on an upper surface of second semiconductormaterial 110 to make electrical contact with second semiconductormaterial 110. However, in some examples, source electrode 125 and/ordrain electrode 130 penetrate into second semiconductor material 110. Insome examples, this penetration is deep enough that source electrode 125and/or drain electrode 130 contact or even pass through heterojunction115. In another or the same example, one or more interstitial gluemetals or other conductive materials are disposed between sourceelectrode 125 and/or drain electrode 130 and one or both ofsemiconductor materials 105, 110.

In the depicted example, gate electrode 135 is electrically insulatedfrom second semiconductor material 110 by a singleelectrically-insulating layer (gate dielectric 155) having a uniformthickness d5. However, in other examples not depicted, a multi-layer canbe used to insulate gate electrode 135 from second semiconductormaterial 110. In another example, a single or multi-layer having anon-uniform thickness can be used to insulate gate electrode 135 fromsecond semiconductor material 110.

It is worth noting that the various features of lateral-channel HFET 100can be made from a variety of different materials. For example, firstsemiconductor material 105 may include GaN, InN, AlN, AlGaN, InGaN,AlInGaN. In some examples, first semiconductor material 105 can alsoinclude compound semiconductors containing arsenic such as, for example,GaAs, InAs, AlAs, InGaAs, AlGaAs, InAlGaAs. Second semiconductormaterial 110 can be, for example, AlGaN, GaN, InN, AlN, InGaN, AlIn—GaN.Second semiconductor material 110 can also include compoundsemiconductors containing arsenic such as one or more of GaAs, InAs,AlAs, InGaAs, AlGaAs, InAlGaAs. The compositions of first and secondsemiconductor materials 105, 110—which also can be referred to as“active layers”—are tailored such that a two-dimensional electron gas120 forms at heterojunction 115. For example, the compositions of firstand second semiconductor materials 105, 110 can be tailored such that asheet carrier density of 10¹¹ to 10¹⁴ cm⁻² arises at heterojunction 115(more specifically, a sheet carrier density of 5×10¹² to 5×10¹³ cm⁻² or8×10¹² to 1.2×10¹³ cm⁻² may arise at heterojunction 115). Semiconductormaterials 105, 110 can be formed above a substrate. In one example thesubstrate may include gallium nitride, gallium arsenide, siliconcarbide, sapphire, silicon, or the like. First semiconductor material105 can either be in direct contact with such a substrate or one or moreintervening layers may be present.

Source electrode 125, drain electrode 130, and gate electrode 135 can bemade from various electrical conductors including, for example, metalssuch as Al, Ni, Ti, TiW, TiN, TiAu, TiAlMoAu, TiAlNiAu, TiAlPtAu, or thelike. Insulating layers, 170, 192, and gate dielectric 155 can be madefrom various dielectrics suitable for forming a gate insulator (e.g.,aluminum oxide (Al₂O₃), zirconium dioxide (ZrO₂), aluminum nitride(AlN), hafnium oxide (HfO₂), silicon dioxide (SiO₂), silicon nitride(Si₃N₄), aluminum silicon nitride (AlSiN), or other suitable gatedielectric materials).

Passivation layers 165, 175, 195 can be made from various dielectricsincluding, silicon nitride, silicon oxide, silicon oxynitride, or thelike. The composite passivation layers may mitigate or prevent chargingof surface states in underlying second semiconductor material 110 orlayers 155, 165, 175.

In some examples passivation layers 165, 175, 195 have a compositionsuch that—after extended operation at steady state operationalparameters—the number of charge defects per area in passivation layers165, 175, 195 is less than the sheet carrier density at theheterojunction. In other words, the sum of the products of eachthree-dimensional defect density in passivation layers 165, 175, 195 andthe respective thickness of that layer is less than the(two-dimensional) sheet carrier density at heterojunction 115. Forexample, the number of charge defects per area in passivation layers165, 175, 195 may be less than 20%, or less than 10%, of the sheetcarrier density at heterojunction 115.

Source electrode 125 is disposed a lateral distance d2 from drainelectrode 130. In some examples, lateral distance d2 is between 5 and 50micrometers (more specifically between 9 and 30 micrometers). In someexamples, lateral distance d1 is between 1 and 5 micrometers (morespecifically between 1.5 and 3.5 micrometers). In some examples, thethickness of second passivation material 175 is between 0.2 and 1micrometers (more specifically between 0.35 and 0.75 micrometers). Insome examples, lateral distance d4 is between 1 and 8 micrometers (morespecifically between 2 and 6 micrometers). In some examples, thethickness of third passivation layer 195 is between 0.4 and 3micrometers (more specifically between 0.5 and 2 micrometers). In someexamples, lateral distance d3 is between 1 and 10 micrometers (morespecifically between 2.5 and 7.5 micrometers).

In operation, the insulation layers (e.g., first insulation layer 170and second insulation layer 192) and gate dielectric 155 are disposed toprevent charging of passivation layers (e.g., passivation layers 165,175 and 195) in plurality of composite passivation layers 199. Fielddistribution and charge shield metallization may be used in GaN-basedelectronic devices (such as high voltage, and/or high frequencytransistors and diodes) to achieve high performance metrics. Onepromising passivation material for GaN electronic devices is siliconnitride (SiN). Accordingly, the above mentioned metallization is oftenformed over the SiN passivation layers. However, SiN has a relativelynarrow band gap among dielectrics, which may lead to charge injectioninto the silicon nitride from the adjacent materials under electricfield stress. As a result of charging, the material properties of boththe passivation material (SiN) and the metallization pattern may changewith time. This may lead to drifting performance, and under someconditions, irreversible failure of the device. Accordingly, byincluding a gate dielectric (e.g., gate dielectric 155) and insulationlayers (e.g., insulation layers 170 and 192) in the passivation layer ofthe GaN based device, charging in the passivation layers may be reduced,since in some examples, the insulation layers have a wider bandgap thanthe passivation layers. Reduced charging in the passivation layersresults in a lower probability of device failure/performance drift.Furthermore, since the insulation layers may be made out of the samematerial as the gate dielectric, additional process steps/materials maybe avoided.

FIG. 2 is a cross-sectional view of an example HFET 200 with compositepassivation layer 299. In many ways HFET 200 is similar to (or the sameas) HFET 100 of FIG. 1. However, one noteworthy distinction is that inHFET 200, the area of insulation layers 270, 292 does not occupy theentire composite passivation layer. In other words, the lateral boundsof first insulation layer 270 are substantially coextensive with thelateral bounds of source field plate 245, and the lateral bounds of thesecond insulation layer 292 are also substantially coextensive with thelateral bounds of source field plate 245. In one example, the lateralbounds of first insulation layer 270 may extend past the first gatefield plate 240 and end before via member 285. In another or the sameexample, the length of second insulation layer 292 may extend past thesource field plate 274 and end before via member 290.

FIG. 3 is a cross-sectional view of an example HFET 300 with compositepassivation layer 399. HFET 300 is similar in many respects to HFETs 100and 200 of FIGS. 1-2. However, HFET 300 includes a third compositepassivation layer including third passivation layer 387 and thirdinsulation layer 394. HFET 300 also includes fourth passivation layer396. Third insulation layer 394 is disposed between third passivationlayer 387 and fourth passivation layer 396. Second gate field plate 342is disposed between second insulation layer 392 and third passivationlayer 387, and is coupled to the first gate field plate 340. Asillustrated, source field plate 345 is disposed between third insulationlayer 394 and fourth passivation layer 396.

HFET 300 also includes first gate field plate 340, source field plate345, and second gate field plate 342. Second gate field plate 342 iselectrically connected to gate electrode 335. In some examples, sourcefield plate 345 acts as a so-called “shield wrap.” As discussed above,some GaN devices suffer from parasitic DC-to-RF dispersion that isbelieved to arise—at least in part—due to the exchange of surfacecharges with the environment during high-voltage operation. Inparticular, surface states charge and discharge with relatively slowresponse times. Subsequently, performance of GaN devices suffer at highfrequency operation. Metallic shield wraps can mitigate or eliminatethese effects by improving shielding and preventing the movement ofsurface charges. In some examples, source field plate 345 may reduce thepeak values of electric fields in HFET 300 (e.g., the electric fieldbetween heterojunction 315 and third edge 344 of second gate field plate342). In some examples, source field plate 345 also acts to depleteheterojunction 315 of charge carriers, as discussed further below. Insome examples, source field plate 345 serves in multiple capacities,i.e., acting as a shield wrap, a field plate, and/or to depleteheterojunction 315. The particular use of source field plate 345 in adevice will be a function of any of a number of different geometric,material, and operational parameters. Because of the possibility forsource field plate 345 to perform one or more roles, it is referred toherein simply as a “source field plate.”

In the illustrated examples, source field plate 345 has a generallyrectangular cross-section. Source field plate 345 includes a fourth edge374. Fourth edge 374 is disposed a lateral distance d0+d1+d3+d11 towardsdrain electrode 330 from a side of source electrode 325 and a verticaldistance d5+d6+d7+d8 above second semiconductor material 110. In someexamples, lateral distance d0+d1+d3+d11 is greater than or equal totwice the vertical distance d5+d6+d7+d8. For example, lateral distanced0+d1+d3+d11 can be greater than or equal to three times d5+d6+d7+d8.Fourth edge 374 is vertically separated from second semiconductormaterial 110 by gate dielectric 355, first passivation layer 365, firstinsulation layer 370, second passivation layer 375, second insulationlayer 392, third passivation layer 387, and third insulation layer 394.As discussed further below, the electric field between source fieldplate 345 and heterojunction 315 are highest at fourth edge 374 undercertain bias conditions.

Source field plate 345 can be electrically connected to source electrode325 in a variety of ways. In the illustrated examples, source electrode325 is electrically connected to source field plate 345 by a source viamember 380. In other examples, source electrode 325 can be electricallyconnected to source field plate 345 outside of the illustratedcross-section.

As shown, drain electrode 330 is electrically connected to another drainvia by way of via members 385, 390. Drain via member 388 extends throughthird passivation layer 387 to a same vertical level as second gatefield plate 342, thus acting as an extension of drain electrode 330. Viamember 388, by virtue of being on the same vertical level as sourcefield plate 345, is the nearest extension of drain electrode 330 tosource field plate 345. The fourth composite passivation material has athickness d10.

In some examples, d1+d3+d4 is between 5 and 35 micrometers (morespecifically between 8 and 26 micrometers). In some examples, lateraldistance d9 is between 1 and 10 micrometers (more specifically between 2and 6 micrometers). In some examples layers 365, 375, 387, 396 have acomposition and quality such that—after extended operation at steadystate operational parameters—the number of charge defects per-area inlayers 365, 375, 387, 396 is less than the sheet carrier density at theheterojunction. In other words, the sum of the products of eachthree-dimensional defect density of passivation layers 365, 375, 387,396 and the respective thickness of that layer is less than the(two-dimensional) sheet carrier density at heterojunction 115. Forexample, the number of charge defects per area in insulating materiallayers 365, 375, 387, 396 is less than 20%, (more specifically, lessthan 10%, of the sheet carrier density at heterojunction 315).

FIG. 4 is a cross-sectional view of an example HFET 400 with a compositepassivation layer 499. HFET 400 is similar to HFET 300; however, thelateral bounds of first insulation layer 470 are substantiallycoextensive with the lateral bounds of first gate field plate 440, thelateral bounds of second insulation layer 492 are substantiallycoextensive with the lateral bounds of second gate field plate 442, andthe lateral bounds of third insulation layer 494 are substantiallycoextensive with the lateral bounds of the source field plate 445. Inother words, HFET 400 is similar to HFET 300 except the area ofinsulation layers 470, 492, 492 in HFET 400 does not occupy the entirepassivation layer. In one example, the length of first insulation layer470 may extend past first gate field plate 440 and end before via member485. In one example, the length of second insulation layer 492 mayextend past the second gate field plate 442 and end before via member490. In one example, the length of third insulation layer 494 may extendpast source field plate 445 and end before the drain 488.

FIG. 5 is a flow chart illustrating an example method 500 of HFETfabrication. The order of process blocks 502-510 in method 500 shouldnot be deemed limiting. As one skilled in the pertinent art willappreciate, process blocks 502-510 may occur in any order and even inparallel. Furthermore, process blocks may be added to/removed frommethod 500, as process blocks 502-510 depict a highly simplified versionof method 500 in order to prevent obscuring certain aspects of theinstant disclosure.

Process block 502 depicts depositing a semiconductor layer (e.g., first105 and second semiconductor material 110) on a substrate. In oneexample, the semiconductor layer and substrate may be comprised of anyof the materials listed in the discussion of FIGS. 1-4. In one example,a heterojunction may be formed between a first semiconductor materialand second semiconductor material (e.g., first semiconductor material105 and second semiconductor material 110). In another or the sameexample, source electrode and drain electrode are coupled to the secondsemiconductor material. Furthermore, a gate dielectric may be depositedproximate to second semiconductor material such that the secondsemiconductor material is disposed between the gate dielectric and thefirst semiconductor material.

Process block 504 illustrates depositing one or more compositepassivation layers on the semiconductor layer. In one example, this mayinclude depositing a plurality of composite passivation layers, where afirst composite passivation layer in the plurality of compositepassivation layers includes a first insulation layer and a firstpassivation layer. In the aforementioned example, the first passivationlayer is disposed between the gate dielectric and the first insulationlayer, and a gate may be formed between the gate dielectric and theplurality of composite passivation layers. In another or the sameexample, a second composite passivation layer in the plurality ofcomposite passivation layers may be deposited. The second compositepassivation layer may include a second insulation layer and a secondpassivation layer, where the first insulation layer is disposed betweenthe first passivation layer and the second passivation layer. In oneexample, the first insulation layer has a larger bandgap than the firstpassivation layer. In another or the same example, the first passivationlayer includes SiN, and the gate dielectric and the first insulationlayer include a metal oxide

In one example, depositing the plurality of composite passivation layersincludes depositing the first insulation layer and the second insulationlayer such that lateral bounds of the first insulation layer and thesecond insulation layer are less than a lateral distance between thesource electrode and drain electrode. In another or the same example, athird composite passivation layer is deposited and includes a thirdinsulation layer and third passivation layer. In this example, thesecond insulation layer is disposed between the second passivation layerand the third passivation layer.

Process block 506 shows forming ohmic contacts by recess etching, metaldeposition, metal patterning, and rapid thermal annealing. The ohmiccontacts are in contact with the top surface of the semiconductor layersuch as in FIGS. 1-4.

Process block 508 depicts patterning one or more field plates on the oneor more composite passivation layers. In one example, a first gate fieldplate is formed between the first passivation layer and the secondpassivation layer. In another or the same example, the first gate fieldplate is coupled to the gate electrode. Furthermore, a source fieldplate may be deposited on the second insulation layer. In one example,the first gate field plate is disposed between the first insulationlayer and the second passivation layer. In another example, a secondgate field plate (coupled to the first gate field plate) is formed, andthe second gate field plate is disposed between the second insulationlayer and a third passivation layer. The source field plate may becoupled to the source electrode and formed on the third insulationlayer.

Process block 510 shows depositing an encapsulation layer on the topmost composite passivation layer. In one example, depositing anencapsulation layer includes a fourth passivation layer, where thefourth passivation layer is disposed on the source field plate and thirdinsulation layer.

FIG. 6 is a flow chart illustrating an example method 600 of HFETfabrication. The order of process blocks 602-622 in method 600 shouldnot be deemed limiting. As one skilled in the pertinent art willappreciate, process blocks 602-622 may occur in any order and even inparallel. Furthermore, process blocks may be added to/removed frommethod 600, as process blocks 602-622 depict a highly simplified versionof method 600 in order to prevent obscuring certain aspects of theinstant disclosure.

In block 602, a semiconductor layer is deposited on the substrate. Inone example, the semiconductor layer and substrate may comprise of anyof the materials listed in the discussion of FIGS. 1-4.

Process block 604 depicts depositing one or more composite passivationlayers on the semiconductor layer. It should be appreciated that theinsulation materials and passivation material in composite passivationlayers may include the same or different material compositions.

Block 606 shows that footprints for ohmic contacts are formed via plasmaetching. The footprints may be formed by using the composite passivationlayers as an etch stop. As mentioned previously, the compositepassivation layers include a gate dielectric layer and a passivationlayer. In one example, the gate dielectric layer may be made of aluminumoxide and the passivation layer may be made of silicon nitride (SiN).The plasma etch rate of the passivation material is greater than theetch rate of the gate dielectric material. In one example, the plasmaetch rate of passivation material is substantially greater than the etchrate of gate dielectric. In one example, the etch rate of thepassivation layers may be up to 100 times greater than the etch rate ofthe gate dielectric and isolation layers. This allows for precisecontrol of the thickness of device layers under each field plate (i.e.,gate field plates, source field plates, drain field plates). In oneexample, the gate dielectric and insulation layers may be used as etchstop layers.

In process block 608, ohmic contacts are created by recess etching,metal deposition, metal patterning, and high temperature annealing.

Optional process block 610 shows that additional composite passivationlayers are deposited.

In block 614, a gate contact is formed by metal deposition and metalpatterning. An optional field plate may also be created in this step.

Process blocks 616-620 are optional in example method 600. Block 616depicts depositing additional composite passivation layers. In block618, additional footprints for field plates can be created by plasmaetching with an etch stop. Block 620 shows depositing and patterningadditional metal field plates.

In block 622, an encapsulation layer is deposited on the top mostcomposite passivation layer.

FIG. 7 is a cross-sectional view of an example HFET 700 with compositepassivation layer 799. In many ways HFET 700 is similar to (or the sameas) HFET 100 of FIG. 1. However, one noteworthy distinction is that inHFET 700 includes second gate field plate 742 that is coupled to thefirst gate field plate 740 and is disposed between second insulationlayer 792 and third passivation layer 795. It is appreciated that inanother example of HFET 700, the area of insulation layers 770, and 792,does not occupy the entire composite passivation layer. In this example,the lateral bounds of first insulation layer 770 may be substantiallycoextensive with the lateral bounds of first gate field plate 740, andthe lateral bounds of second insulation layer 792 may be substantiallycoextensive with second gate field plate 742. In other words, theinsulation layers 770, and 792, do not extend the entire distancebetween source electrode 725 and drain electrode 730.

FIG. 8 is a cross-sectional view of an example HFET 800 with compositepassivation layer 899. HFET 800 is similar in many respects to the HFETsshown in the previous figures. However, HFET 800 includes a thirdcomposite passivation layer including third passivation layer 887 andthird insulation layer 894. HFET 800 also includes fourth passivationlayer 896. Third insulation layer 394 is disposed between thirdpassivation layer 887 and fourth passivation layer 896. Second gatefield plate 842 is disposed between second passivation layer 875 andthird passivation layer 887 and is coupled to the first gate field plate840. As illustrated, third gate field plate 846 is disposed between thethird insulation layer 894 and fourth passivation layer 896. The thirdgate field plate 846 is coupled to the second gate field plate 842. Itis appreciated that in another embodiment of HFET 800, the area ofinsulation layers 870, 892, and 894 does not occupy the entire compositepassivation layer 899. In this example, the lateral bounds of thirdinsulation layer 894 are substantially coextensive with third gate fieldplate 846. In other words, the insulation layers 870, 892, and 894 donot extend the entire distance between source electrode 825 and drainelectrode 830.

FIG. 9 is a cross-sectional view of an example HFET 900 with compositepassivation layer 999. HFET 900 is similar in many respects to the HFETsshown in FIGS. 1-4, 7 and 8. However, HFET 900 includes another exampleof a second gate connected field plate 942. The second gate field plate942 is coupled to first gate field plate 940. It is appreciated that inanother embodiment of HFET 900, the area of insulation layers 970, 992,994 does not occupy the entire composite passivation layer. In otherwords, like in the other HFET embodiments, insulation layers 970, 992,994 do not extend the entire distance between source electrode 825 anddrain electrode 830.

HFET 900 includes first semiconductor material 905, second semiconductormaterial 910, and heterojunction 915 (disposed between them). HFET 900also has a plurality of composite passivation layers. First compositepassivation layer includes first insulation layer 970 and firstpassivation layer 965, and first passivation layer 965 is disposedbetween second semiconductor material 910 and first insulation layer970. Second composite passivation layer includes second insulation layer992 and second passivation layer 975, and second passivation layer 975is disposed between first insulation layer 970 and second insulationlayer 992. Third composite passivation layer includes third insulationlayer 994 and third passivation layer 987. Third passivation layer 987is disposed between second insulation layer 992 and third insulationlayer 994. In the depicted example, first gate field plate 940 isdisposed between first passivation layer 965 and second passivationlayer 975. Furthermore, gate dielectric 955 is disposed between firstpassivation layer 965 and second semiconductor material 910. Gateelectrode 935 is disposed between gate dielectric 955 and firstpassivation layer 965. HFET 900 may include fourth passivation layer 996and third insulation layer 994 is disposed between fourth passivationlayer 996 and third passivation layer 987.

In one example, second gate field plate 942 extends from secondpassivation layer 975, through second insulation layer 992, throughthird passivation layer 987, and into fourth passivation layer 996. Itis worth noting that in the depicted example, second gate field plate942 has a large continuous bulk metal component disposed in thirdpassivation layer 987. In one example, the lateral dimension of the bulkcomponent of second gate field plate 942 occupies less than 50% of thedistance between source electrode 925 and drain electrode 930 in thirdpassivation layer 987. In another example, the lateral dimension of thebulk component of second gate field plate 942 occupies less than 33% ofthe distance between source electrode 925 and drain electrode 930 inthird passivation layer 987. In the illustrated example, second gatefield plate 942 has a larger lateral cross sectional diameter than firstgate field plate 940, and second gate field plate 942 is disposed abovefirst gate field plate 940. As depicted, second gate field plate 942 hasa component that is disposed between third passivation layer 987 andfourth passivation layer 996. In the depicted example, this component issegmented; however, in other examples this component may be continuous.It should be noted that second gate field plate 942 may take any of theshapes of the first gate field plates, second gate field plates, and/orthird gate field plates in any of the examples depicted in FIGS. 1-4, 7,and 8. These shapes may be achieved via fabrication of a singlecontinuous gate field plate (e.g., second gate field plate 942), ratherthan dividing the gate field plate fabrication process into many stepsto form individual gate field plates.

In one embodiment, HFET 900 may be fabricated by the following method.It should be noted that these steps may be completed in any order andeven in parallel. Furthermore, as will be appreciated by one skilled inthe relevant art, the following method may omit steps, or alternatively,may include steps that are not necessary.

A first semiconductor material and a second semiconductor material areprovided. A heterojunction is disposed between the first semiconductormaterial and the second semiconductor material. In one embodiment, firstand/or second semiconductor materials may include GaN.

Source and drain electrodes are formed on the second semiconductormaterial. In one example, source and drain electrodes may extend intothe second semiconductor material and may even contact the firstsemiconductor material.

A gate dielectric is formed on the second semiconductor material. In oneexample, the gate dielectric includes AlO_(x), HfO_(x), or othersuitable dielectric materials (high-k or otherwise).

A gate electrode is formed proximate to the surface of the secondsemiconductor material, and the gate dielectric is disposed between thegate electrode and the second semiconductor material.

A plurality of composite passivation layers is deposited proximate tothe gate dielectric, and the gate dielectric is disposed between theplurality of composite passivation layers and the second semiconductormaterial. In one example, a first composite passivation layer in theplurality of composite passivation layers includes a first passivationlayer and a first insulation layer. The first passivation layer isdisposed between the gate dielectric and the first insulation layer. Inanother or the same example, a second composite passivation layer in theplurality of composite passivation layers includes a second passivationlayer and a second insulation layer. The second passivation layer isdisposed between the first insulation layer and the second insulationlayer.

Patterned trenches are then etched into the plurality of compositepassivation layers to form one or more gate field plates. The geometryof these patterned trenches may be controlled by depositing andresolving a photoresist (positive or negative) on appropriate layers ofdevice architecture. The trench geometry may match the shape of thefield plates to be formed (for details about trench geometry, seedescription of first, second, and third, gate field plates as discussedabove in connection with FIGS. 1-4, and 7-9). In one example, etching offirst composite passivation layer may occur prior to forming the secondcomposite passivation layer. However, in another example the pluralityof composite passivation layers may be formed and then etched alltogether. Etching may include wet and/or dry etching. It should be notedthat the passivation layers may include SiN and etch up to 100 timesfaster than the insulation layers, depending on the etchant used and theprocess employed. Accordingly, insulation layers and/or the gatedielectric may be used as etch stop layers to precisely control thegeometry of gate field plates.

The etched patterns/holes may then be backfilled with a metal or otherconductive material to form gate field plates (such as first gate fieldplate, second gate field plate, and third gate field plate from FIGS.1-4, and 7-9 and associated discussion). The field plates may bedeposited in one or many steps, and their geometry may include onecontinuous layer or multiple structures independent of one another. Inthe example depicted in FIG. 9, the bulk of second gate field plate 942may have been formed in one metal deposition step, by depositing metalin a trench etched into third passivation layer 987. After this, theportion of second gate field plate 942 disposed on third passivationlayer 987 may have been patterned and deposited.

It should be noted that after the gate field plates have been formed,excess metal/deposition flux may be removed by chemical mechanicalpolishing or the like. Additional isolation and/or passivation layersmay be deposited after forming the various field plate architectures.Furthermore, the process above may be used to fabricate any of thegeometric structures depicted in the figures and described in thespecification.

The above description of illustrated examples of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific examples of the invention are described herein forillustrative purposes, various modifications are possible within thescope of the invention, as those skilled in the relevant art willrecognize.

These modifications can be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific examples disclosedin the specification. Rather, the scope of the invention is to bedetermined entirely by the following claims, which are to be construedin accordance with established doctrines of claim interpretation.

1-20. (canceled)
 21. A method of fabricating a transistor comprising:depositing a gate dielectric; depositing a first passivation layer;depositing a first insulation layer, wherein the first passivation layeris disposed between the gate dielectric and the first insulation layer;forming a gate electrode; depositing a second passivation layer;depositing a second insulation layer, wherein the second passivationlayer is disposed between the first insulation layer and the secondinsulation layer; and forming a first gate field plate disposed betweenthe first insulation layer and the second passivation layer.
 22. Themethod of claim 21, wherein the first insulation layer has a largerbandgap than the first passivation layer.
 23. The method of claim 21,wherein the first gate field plate is electrically connected to the gateelectrode.
 24. The method of claim 21, further comprising forming asource field plate on the second insulation layer.
 25. The method ofclaim 21, further comprising forming a second gate field plateelectrically connected to the first gate field plate, wherein the secondgate field plate is disposed on the second insulation layer.
 26. Themethod of claim 21, wherein depositing the first insulation layerfurther comprises depositing the first insulation layer such thatlateral bounds of the first insulation layer are less than a lateraldistance between a source electrode and a drain electrode.
 27. Themethod of claim 26, wherein depositing the second insulation layerfurther comprises depositing the second insulation layer such thatlateral bounds of the second insulation layer are less than the lateraldistance between the source electrode and the drain electrode.
 28. Themethod of claim 21, further comprising: depositing a third insulationlayer; and depositing a third passivation layer, wherein the thirdpassivation layer is disposed between the second insulation layer andthe third insulation layer.
 29. The method of claim 28, furthercomprising: forming a second gate field plate electrically connected tothe first gate field plate, wherein the second gate field plate isdisposed between the second passivation layer and the third passivationlayer.
 30. The method of claim 29, further comprising: forming a sourcefield plate, wherein the third passivation layer is disposed between thesource field plate and the second insulation layer.
 31. The method ofclaim 21, wherein the gate dielectric and the first insulation layercomprise a same material composition.
 32. The method of claim 21,wherein the gate dielectric and the first insulation layer comprise ametal oxide.
 33. The method of claim 21, wherein the first passivationlayer and the second passivation layer comprise Silicon Nitride.